Amorphous AlN films grown by ALD from trimethylaluminum and monomethylhydrazine-Reference-Cited by-同舟云学术

Amorphous AlN films grown by ALD from trimethylaluminum and monomethylhydrazine

Published:2021 Issue:42 Volume:50 Page:15062-15070
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Parkhomenko Roman G.¹^ORCID,De Luca Oreste²^ORCID,Kołodziejczyk Łukasz³^ORCID,Modin Evgeny¹,Rudolf Petra²^ORCID,Martínez Martínez Diego⁴^ORCID,Cunha Luis⁴,Knez Mato¹⁵^ORCID

Affiliation:

1. CIC NanoGUNE, Tolosa Hiribidea 76, E-20018 San Sebastian, Spain

2. Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands

3. Institute of Materials Science and Engineering, Lodz University of Technology, Stefanowskiego 1/15, 90-924 Lodz, Poland

4. Physics Center of Minho and Porto Universities-CF-UM-UP, School of Sciences, University of Minho, Campus de Gualtar, 4710-057, Braga, Portugal

5. IKERBASQUE, Basque Foundation for Science, Alameda Urquijo 36-5, 48011 Bilbao, Spain

Abstract

Amorphous AlN films grown from TMA and MMH were obtained and investigated. The amount of impurities varied from 3 to 9 at% for carbon, and 4 to 12 at% for oxygen. The values of mechanical characteristics were ∼14 GPa (hardness) and ∼164 GPa (Young's modulus).

Funder

Ministerio de Ciencia e Innovación

Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Narodowe Centrum Nauki

Fundação para a Ciência e a Tecnologia

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/DT/D1DT02529E

Reference54 articles.