Mössbauer spectroscopy of Sn‐doped GaAs grown by metalorganic vapor‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339603
Reference29 articles.
1. Etude du dopage de l'arséniure de gallium par la technique d'épitaxie en phase vapeur aux organométalliques
2. Tin doping of MOVPE grown gallium arsenide using tetraethyltin
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4. (GaAl)As Tuneel junctions grown by molecular beam epitaxy: Intercell ohmic contacts for multiple-band-gap solar cells
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1. The DX center and other tin-related defects in AlGaAs semiconductors;Hyperfine Interactions;1994-12
2. Bistability, local symmetries and charge states of Sn-related donors in AlxGa1-xAs and GaAs under pressure studied by Mossbauer spectroscopy;Semiconductor Science and Technology;1991-10-01
3. Pressure-induced shallow-to-deep donor-state transition indoped119GaAs observed by Mössbauer spectroscopy;Physical Review Letters;1990-08-27
4. Doping of gallium arsenide in MOCVD: Equilibrium calculations;Journal of Crystal Growth;1990-05
5. Deep donor levels (DXcenters) in III‐V semiconductors;Journal of Applied Physics;1990-02
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