(GaAl)As Tuneel junctions grown by molecular beam epitaxy: Intercell ohmic contacts for multiple-band-gap solar cells-Reference-Cited by-同舟云学术

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(GaAl)As Tuneel junctions grown by molecular beam epitaxy: Intercell ohmic contacts for multiple-band-gap solar cells

Published:1984-11 Issue:1 Volume:13 Page:67-76
ISSN:0379-6787
Container-title:Solar Cells
language:en
Short-container-title:Solar Cells

Author:

Contour J.P.,M'Baye A.,Chaix C.

Publisher

Elsevier BV

Subject

General Engineering

Reference19 articles.

1. Efficiency of tandem solar cell systems as a function of temperature and solar energy concentration ratio

2. Proc. 16th Photovoltaic Specialists' Conf.;Beaumont,1982

3. Proc. 14th Photovoltaic Specialists' Conf.;Dupuis,1980

4. Proc. 15th Photovoltaic Specialists' Conf.;Bedair,1981

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Double Heterostructure GaAs Tunnel Junction for a AlGaAs/GaAs Tandem Solar Cell;Japanese Journal of Applied Physics;1988-02-20

2. Mössbauer spectroscopy of Sn‐doped GaAs grown by metalorganic vapor‐phase epitaxy;Journal of Applied Physics;1987-09

3. Ga1-X AlXAs/GaAs Monolithic Cascade Solar Cells : Limitation of the Ga Al As Cell Performance Near the Cross-Over Region;Seventh E.C. Photovoltaic Solar Energy Conference;1987

4. GaAlAs/GaAs solar cells grown by molecular beam epitaxy: Material properties and device parameters;Solar Cells;1986-04

5. A stability criterion for tunnel diode interconnect junctions in cascade solar cells;Solar Cells;1985-11

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