Iron redistribution and compensation mechanisms in semi‐insulating Si‐implanted InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343086
Reference21 articles.
1. Further evidence of chromium, manganese, iron, and zinc redistribution in indium phosphide after annealing
2. SIMS Studies of 9Be Implants in Semi‐Insulating InP
3. Depth profiles of Fe and Cr implants in InP after annealing
4. Annealing behavior of ion‐implanted Fe in InP
5. Stoichiometric disturbances in ion implanted GaAs and redistribution of Cr during annealing
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1. Anomalous Fe diffusion in Si-ion-implanted β–Ga2O3 and its suppression in Ga2O3 transistor structures through highly resistive buffer layers;Applied Physics Letters;2015-01-19
2. Rapid Thermal MOCVD Processing for InP-Based Devices;Rapid Thermal Processing for Future Semiconductor Devices;2003
3. Rapid thermal low-pressure metal organic chemical vapor deposition of Fe-doped InP layers;Applied Physics Letters;2002-01-21
4. Zinc and group V element co-implantation in indium phosphide;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-05
5. Defect characterization in InP substrates implanted with 2 MeV Fe ions;Materials Science and Engineering: B;1997-02
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