Depth profiles of Fe and Cr implants in InP after annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.330071
Reference11 articles.
1. Photoluminescence from chromium in GaAs
2. Chromium profiles in semi‐insulating GaAs after annealing with a Si3N4encapsulant
3. Chromium redistribution during thermal annealing of semi‐insulating GaAs as a function of encapsulant and implant fluence
4. Cr profiles in semi‐insulating GaAs after annealing with and without SiO2encapsulants in a H2‐As4atmosphere
5. Damage gettering of Cr during the annealing of Cr and S implants in semi‐insulating GaAs
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1. Atomic environment of Fe following high-temperature implantation in InP;Physical Review B;2003-12-31
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3. Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications;Journal of Applied Physics;1999-05
4. Interaction between Fe, dopants, and secondary defects in MeV Fe ion implanted InP;Journal of Applied Physics;1999-01-15
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