Electrical and chemical analysis of Ti/Au contacts to β-Ga2O3-Reference-Cited by-同舟云学术

Electrical and chemical analysis of Ti/Au contacts to β-Ga2O3

Published:2021-06-01 Issue:6 Volume:9 Page:061104
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Lyle Luke A. M.¹^ORCID,Back Tyson C.²^ORCID,Bowers Cynthia T.²,Green Andrew J.³,Chabak Kelson D.³,Dorsey Donald L.²^ORCID,Heller Eric R.²^ORCID,Porter Lisa M.¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA

2. Air Force Research Laboratory Materials and Manufacturing Directorate, WPAFB, Dayton, Ohio 45433, USA

3. Air Force Research Laboratory Sensors Directorate, WPAFB, Dayton, Ohio 45433, USA

Funder

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0051340

Reference36 articles.

1. Experimental electronic structure of In2O3and Ga2O3

2. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

3. Lateral β-Ga2O3 field effect transistors

4. Characterization of Epitaxial β-(Al,Ga,In)2O3-Based Films and Applications as UV Photodetectors

5. Carrier Transport and Gain Mechanisms in $\beta$ –Ga2O3-Based Metal–Semiconductor–Metal Solar-Blind Schottky Photodetectors

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