Influence of Ultralow Temperature on Quasi-2-D β-Ga<sub>2</sub>O<sub>3</sub> Field-Effect Transistors-Reference-Cited by-同舟云学术

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Influence of Ultralow Temperature on Quasi-2-D β-Ga₂O₃ Field-Effect Transistors

Published:2024-07 Issue:7 Volume:71 Page:4233-4239
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chen Jin-Xin¹^ORCID,Liu Bing-Yan²^ORCID,Gu Yang¹,Chen Rongsheng³^ORCID,Li Bin³^ORCID,Zhou Changjian³^ORCID

Affiliation:

1. School of Microelectronics, South China University of Technology, Guangzhou, China

2. School of Electrical and Electronic Engineering, Nanyang Technological University, Jurong West, Singapore

3. School of Microelectronics, Fudan University, Shanghai, China

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10566499/10540027.pdf?arnumber=10540027

Reference34 articles.

1. Band alignment of AlN/β-Ga2O3 heterojunction interface measured by x-ray photoelectron spectroscopy

2. Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors

3. High-energy x-ray radiation effects on the exfoliated quasi-two-dimensional β-Ga2O3 nanoflake field-effect transistors

4. Ultrahigh Deep-UV Sensitivity in Graphene-Gated β-Ga2O3 Phototransistors

5. High Responsivity β-Ga2O3 Metal–Semiconductor–Metal Solar-Blind Photodetectors with Ultraviolet Transparent Graphene Electrodes

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