Strain determination and microstructural characterization of 50 keV Sn‐ion‐implanted Si(001)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358954
Reference23 articles.
1. Predicted band gap of the new semiconductor SiGeSn
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4. The growth of strained Si1−xGex alloys on 〈001〉 silicon using solid phase epitaxy
5. The annealing behaviour of ion-implanted Si studied using time-resolved reflectivity
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