Electronic and optical characteristics of GaS/g-C3N4 van der Waals heterostructures: Effects of biaxial strain and vertical electric field-Reference-Cited by-同舟云学术

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Electronic and optical characteristics of GaS/g-C3N4 van der Waals heterostructures: Effects of biaxial strain and vertical electric field

Published:2020-10 Issue: Volume:180 Page:109562
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Bai Kaifei,Cui Zhen^ORCID,Li Enling,Ding Yingchun,Zheng Jiangshan,Liu Chang,Zheng Yanpeng

Funder

National Natural Science Foundation of China

Shaanxi Provincial Education Department

Science and Technology Project of Xi’an

Innovation Project of Key Industry Chain in Shaanxi Province

Project of key projects of research and development in Shaanxi Province

Industrial Key Project Foundation of Shaanxi Province, China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference83 articles.

1. Catalysis with two-dimensional materials and their heterostructures;Deng;Nat. Nanotechnol.,2016

2. Photodetectors based on graphene, other two-dimensional materials and hybrid systems;Koppens;Nat. Nanotechnol.,2014

3. Design of van der Waals interfaces for broad-spectrum optoelectronics;Nicolas;Nat. Mater.,2020

4. Graphene spintronic devices with molecular nanomagnets;Candini;Nano Lett.,2011

5. Single-crystalline diluted magnetic semiconductor GaN: Mn nanowires;Choi;Adv. Mater.,2005

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