Model of a two-stage rf plasma reactor for SiC deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1373701
Reference49 articles.
1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
2. Growth of large SiC single crystals
3. Thermodynamic Analysis and Kinetic Implications of Chemical Vapor Deposition of Sic from Si-C-C1-H Gas Systems
4. Gas phase kinetics analysis and implications for silicon carbide chemical vapor deposition
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