Gas phase kinetics analysis and implications for silicon carbide chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference44 articles.
1. Chemical Vapor Deposition of Single Crystalline β ‐ SiC Films on Silicon Substrate with Sputtered SiC Intermediate Layer
2. Heteroepitaxial growth of β-SiC on silicon substrate using SiCl4-C3H8-H2 system
3. High-field transport in wide-band-gap semiconductors
4. Epitaxial growth and electric characteristics of cubic SiC on silicon
5. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
Cited by 106 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Thin-film (Al)BCN materials synthesized by sequential precursor pulses to mimic atomic layer deposition;AIP Advances;2023-02-01
2. Estimation of supersaturation at steps during chemical vapor deposition of 4H-SiC ( 0001¯ ) from reported growth rate and cross-sectional profile of spiral hillock;Japanese Journal of Applied Physics;2022-10-31
3. Designing silicon carbide heterostructures for quantum information science: challenges and opportunities;Materials for Quantum Technology;2022-05-23
4. A review of the simulation studies on the bulk growth of silicon carbide single crystals;Journal of the Korean Ceramic Society;2022-02-18
5. Experimental and Simulation Research on the Preparation of Carbon Nano-Materials by Chemical Vapor Deposition;Materials;2021-11-30
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3