The effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide (001)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1858054
Reference28 articles.
1. Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures
2. Low threshold current density 1.3 [micro sign]m InAs∕InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy
3. Room-temperature continuous-wave operation of InAsSb quantum-dot lasers near 2 μm based on (001) InP substrate
4. Nano-Optical Studies of Individual Nanostructures
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1. Growth and structure of In0.5Ga0.5Sb quantum dots on GaP(001);Applied Physics Letters;2016-09-05
2. Material and device characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells;Applied Physics Letters;2015-10-12
3. Investigation on the structural stability and electronic properties of InSb nanostructures – A DFT approach;Alexandria Engineering Journal;2014-06
4. In-rich molecular beam epitaxy of InAs on Sb-terminated GaAs(001) surface;Journal of Crystal Growth;2013-05
5. Effect of antimony coverage on InAs/GaAs (001) heteroepitaxy;Molecular Beam Epitaxy;2013
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