Current transport mechanisms in GaN-based metal–semiconductor–metal photodetectors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120752
Reference6 articles.
1. Properties of a photovoltaic detector based on an n-type GaN Schottky barrier
2. Characterisation of Pd Schottky barrier on n-type GaN
3. Very low dark current metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers
4. Shallow and Deep Level Defects in GaN
5. Analysis of deep levels inn‐type GaN by transient capacitance methods
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