Observation of bias-dependent noise sources in a TiOx/TiOy bipolar resistive switching frame
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4865783
Reference24 articles.
1. Memristive switching mechanism for metal/oxide/metal nanodevices
2. Nanoionics-based resistive switching memories
3. Read/write schemes analysis for novel complementary resistive switches in passive crossbar memory arrays
4. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
5. Resistive Switching Multistate Nonvolatile Memory Effects in a Single Cobalt Oxide Nanowire
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1. Characteristics of Resistive Switching of SRO/SrZrO3/Pt Stack Processed at Full Room Temperature;Electronic Materials Letters;2020-11-17
2. Electro-Forming and Electro-Breaking of Nanoscale Ag Filaments for Conductive-Bridging Random-Access Memory Cell using Ag-Doped Polymer-Electrolyte between Pt Electrodes;Scientific Reports;2017-06-08
3. Correlative analysis of conducting filament distribution at interfaces and bias-dependent noise sources in TiN/TiOx/Pt and Pt/TiOx/TiOy/Pt bipolar resistive switching frames;Applied Physics Letters;2015-01-19
4. Nanoscale CuO solid-electrolyte-based conductive-bridging-random-access-memory cell operating multi-level-cell and 1selector1resistor;Journal of Materials Chemistry C;2015
5. Electroforming-Free and Multilevel Resistance Switching Properties in Al/TiOx/Cu Structure;ECS Solid State Letters;2014-11-11
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