Subband structure and ionized impurity scattering of the two dimensional electron gas in δ‐doped field effect transistor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359984
Reference25 articles.
1. Growth and characterization of a delta‐function doping layer in Si
2. δ-function-shaped Sb-doping profiles in Si(001) obtained using a low-energy accelerated-ion source during molecular-beam epitaxy
3. The delta-doped field-effect transistor (δFET)
4. DC and AC characteristics of delta-doped GaAs FET
5. Delta‐Doped MESFET with MBE‐Grown Si
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