Redshift of the light emission from highly strained In0.3Ga0.7As∕GaAs quantum wells by dipole δ doping
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2008351
Reference30 articles.
1. GaAs-based long-wavelength lasers
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3. Low threshold InGaAsN/GaAs lasers beyond 1500nm
4. Investigations on GaInNAsSb quinary alloy for 1.5 μm laser emission on GaAs
5. Highly strained 1.24-μm InGaAs/GaAs quantum-well lasers
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Room temperature capacitance-voltage profile and photoluminescence for delta doped InGaAs single quantum well;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-05
2. Energy band structure and spectral gain characteristics of dilute-nitride zinc blende InGaNAs quantum wells embedded in GaAs and GaNAs barriers;Journal of Applied Physics;2006-10
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