Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1380399
Reference39 articles.
1. Progress and prospects of group-III nitride semiconductors
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5. Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals
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