A materials study of PtTiGePd ohmic contacts top+‐AlGaAs as a function of annealing temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359272
Reference11 articles.
1. Shallow ohmic contact to bothn‐ andp‐GaAs
2. Contact Resistance and Contact Resistivity
3. Sulfur passivation of AlxGa1−xAs for ohmic contact formation
4. Pt/Ti/Ge/Pd ohmic contacts to GaAs: A structural, chemical, and electrical investigation
5. Nonalloyed ohmic contacts ton‐GaAs by solid‐phase epitaxy of Ge
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1. Changes in the microstructural and electrical behavior of poly-Si films subjected to ion implantation and annealing process modifications;Scanning;2006-12-06
2. Pd/Ge(or Si)/Pd/Ti/Au ohmic contacts to n-type InGaAs for AlGaAs/GaAs HBTs;Metals and Materials International;2004-07
3. Comparison of Pd/Ge/Ti/Pt and Pd/Si/Ti/Pt Ohmic Contacts to N-Type InGaAs for AlGaAs/GaAs HBTs;Materials Science Forum;2004-03
4. Pd/Si-based ohmic contacts to n-type InGaAs for AlGaAs/GaAs HBTs;Materials Letters;2004-02
5. Pd/Si/Ti/Pt ohmic contact to n-type InGaAs for AlGaAs/GaAs HBT;Materials Letters;2003-06
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