Changes in the microstructural and electrical behavior of poly-Si films subjected to ion implantation and annealing process modifications-Reference-Cited by-同舟云学术

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Changes in the microstructural and electrical behavior of poly-Si films subjected to ion implantation and annealing process modifications

Published:2006-12-06 Issue:1 Volume:20 Page:41-44
ISSN:0161-0457
Container-title:Scanning
language:en
Short-container-title:Scanning

Author:

Cole M. W.

Publisher

Wiley

Subject

Instrumentation,Atomic and Molecular Physics, and Optics

Reference7 articles.

1. Grain growth studies in polysilicon by Ar ion implantation and thermal annealing;Bhattacharyya;J Electrochem Soc,1984

2. A materials study of PtTiGePd ohmic contacts to p+AlGaAs as a function of annealing temperature;Cole;J Appl Phys,1995

3. The effect of germanium ion implanted dose on the amorphization and recrystallization of polycrystalline silicon films;Komen;J Appl Phys,1981

4. The nature of defect layer formation for arsenic ion implantation;Prussin;J Appl Phys,1983

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