Photoluminescence of three phonon replicas of the bound exciton in undoped InGaP prepared by liquid phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360031
Reference21 articles.
1. Surface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistors
2. The characteristics of an In0.5Ga0.5P and In0.5Ga0.5P/GaAs heterojunction grown on a (100) GaAs substrate by liquid‐phase epitaxy
3. Correlation of interface recombination and dislocation density at GalnP/GaAs heterojunctions
4. Misfit strain, relaxation, and band‐gap shift in GaxIn1−xP/InP epitaxial layers
5. Growth of In0.5Ga0.5P on GaAs by LPE: The influence of Growth Temperature and Lattice Mismatch on Photoluminescence
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1. Temperature-Dependent Electron Transport in In 0.5 Ga 0.5 P/GaAs Grown by MOVPE;Chinese Physics Letters;2007-07-26
2. Comparative study of the photoluminescence of InGaP layers grown on GaAs substrates by LPE and MOVPE techniques;Microelectronics Journal;2005-03
3. Luminescence anisotropy of InGaP layers grown by liquid phase epitaxy;Journal of Physics D: Applied Physics;2004-05-13
4. 三元有序合金GaxIn1-xP(x=0.52)的时间分辨谱;Acta Physica Sinica;2002
5. Transport property of Sn-doped In0.5Ga0.5P layers grown by liquid phase epitaxy;Thin Solid Films;1999-02
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