Correlation of interface recombination and dislocation density at GalnP/GaAs heterojunctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356264
Reference11 articles.
1. Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
2. Decay times of excitons in lattice‐matched InGaAs/InP single quantum wells
3. Excitation-power dependence of the near-band-edge photoluminescence of semiconductors
4. Strain relaxation and interdiffusion in Si/Si1−xGex strained layer superlattices
5. Analysis of epitaxial GaxIn1−xAs/InP and AlyIn1−yAs/InP interface region by high resolution x‐ray diffraction
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1. Preparation of 4-inch Ir/YSZ/Si(001) substrates for the large-area deposition of single-crystal diamond;Diamond and Related Materials;2008-07
2. Reduction of mosaic spread using iridium interlayers: A route to improved oxide heteroepitaxy on silicon;Applied Physics Letters;2007-08-06
3. Spatially resolved below-gap emission in partially orderedGaxIn1−xPalloys;Physical Review B;2003-07-10
4. Determination of structural parameters in heterojunction bipolar transistors by x-ray diffraction with (002) reflection;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2002-05
5. SURFACE AND INTERFACIAL RECOMBINATION IN SEMICONDUCTORS;Handbook of Surfaces and Interfaces of Materials;2001
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