Spectroscopic characterization of stress-induced leakage current in sub 5-nm-thick silicon oxide film
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1499978
Reference16 articles.
1. Soft breakdown of ultra-thin gate oxide layers
2. Field-enhanced Si–Si bond-breakage mechanism for time-dependent dielectric breakdown in thin-film SiO2 dielectrics
3. Behavior of the Si/SiO2interface observed by Fowler‐Nordheim tunneling
4. Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing
5. High field related thin oxide wearout and breakdown
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