Trapped charge densities in Al2O3-based silicon surface passivation layers
Author:
Affiliation:
1. NaMLab gGmbH, Nöthnitzer Str. 64, D-01187 Dresden, Germany
2. Chair of Nanoelectronic Materials, TU Dresden, D-01062 Dresden, Germany
Funder
Bundesministerium für Bildung und Forschung (BMBF)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4953141
Reference41 articles.
1. Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
2. On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3
3. Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3
4. Origin of electric dipoles formed at high-k/SiO2 interface
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