Defect formation in SiO2/Si(100) by metal diffusion and reaction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100630
Reference19 articles.
1. High-Temperature SiO2Decomposition at the SiO2/Si Interface
2. Defect formation in thermal SiO2by high‐temperature annealing
3. Defect Microchemistry at the SiO2/Si Interface
4. Reaction of Oxygen with Si(111) and (100): Critical Conditions for the Growth of SiO2
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