Defect formation in thermal SiO2by high‐temperature annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97322
Reference9 articles.
1. The high-temperature oxidation, reduction, and volatilization reactions of silicon and silicon carbide
2. High-Temperature Annealing of Oxidized Silicon Surfaces
3. Electronic states at the silicon-silicon dioxide interface
4. High temperature annealing behavior of electron traps in thermal SiO2
5. Electrical Properties of Post‐annealed Thin SiO2 Films
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