Replacement of magnesium in InGaAs/InP heterostructures during zinc diffusion
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101627
Reference9 articles.
1. Monolithic integration of an InGaAsP/InP laser diode with heterojunction bipolar transistors
2. Heterostructure bipolar transistors and integrated circuits
3. Double-heterojunction bipolar transistors in InP/GaInAs grown by metal organic chemical vapour deposition
4. LPE growth of GaxIn1-xAs layers on InP under PH3 partial pressure and results on Mg-doping
5. Diffusion of Cd And Zn In InP between 550 and 650°C
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3. Acceptor diffusion and segregation in (AlxGa1−x)0.5In0.5P heterostructures;Journal of Applied Physics;2002-04-15
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5. Destruction of the quantum well structure of thin silicon‐germanium superlattices by ion implantation;Applied Physics Letters;1992-04-06
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