Dopant interactions and Mg segregation in (AlxGa1−x)0.5In0.5P heterostructures
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Diffusion of zinc in gallium arsenide: A new model
2. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures
3. Replacement of magnesium in InGaAs/InP heterostructures during zinc diffusion
4. Comparison of Zn and Mg incorporation in MOVPE InP/GaInAsP laser structures
5. Modeling of Atom Diffusion and Segregation in Semiconductor Heterostructures
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 9.2 Laser diodes in the visible spectral range: Red-emitting laser diodes;Laser Systems;2011
2. Donor-acceptor interactions in Al0.5In0.5P;Journal of Electronic Materials;2002-02
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