Determination of the spatial distribution of deep centers from capacitance measurements of pn junctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1654295
Reference13 articles.
1. Frequency dependence of the reverse-biased capacitance of gold-doped silicon P+N step junctions
2. Effects of deep impurities on n+p junction reverse-biased small-signal capacitance
3. Capacitance of Junctions on Gold‐Doped Silicon
4. Capacitance Measurements on Au–GaAs Schottky Barriers
5. Determination of deep levels in semiconductors from C-V measurements
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1. Impact of thermal annealing on deep-level defects in strained-Si∕SiGe heterostructure;Journal of Applied Physics;2008-05-15
2. Fast neutron radiation damage effects on high resistivity silicon junction detectors;Journal of Electronic Materials;1992-07
3. Effects of fast neutron radiation on the electrical properties of silicon detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1991-10
4. Studies of frequency dependent C-V characteristics of neutron irradiated p/sup +/-n silicon detectors;IEEE Transactions on Nuclear Science;1991-04
5. Determination of deep‐level parameters by a new analysis method of isothermal capacitance transients;Journal of Applied Physics;1991-03
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