Determination of deep levels in semiconductors from C-V measurements
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31695/01476860.pdf?arnumber=1476860
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4. Determination of deep‐level parameters by a new analysis method of isothermal capacitance transients;Journal of Applied Physics;1991-03
5. Deep‐level transient spectroscopy studies of near‐surface hole and electron traps in Zn‐doped InP using high barrier Yb/p‐InP Schottky diodes;Journal of Applied Physics;1988-10-15
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