Elimination of trench defects and V-pits from InGaN/GaN structures-Reference-Cited by-同舟云学术

Elimination of trench defects and V-pits from InGaN/GaN structures

Published:2015-03-09 Issue:10 Volume:106 Page:101905
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Smalc-Koziorowska Julita¹,Grzanka Ewa¹,Czernecki Robert¹^ORCID,Schiavon Dario¹,Leszczyński Mike¹

Affiliation:

1. Institute of High Pressure Physics, Polish Academy of Science, Sokolowska 29/37, 01-142 Warsaw, Poland and TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland

Funder

Foundation For Polish Science (Fundacja na rzecz Nauki Polskiej)

Seventh Framework Programme (European Union Seventh Framework Programme)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4914940

Reference12 articles.

1. Structure and formation mechanism of V defects in multiple InGaN∕GaN quantum well layers

2. Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures

3. Investigation of V-Defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire

4. STEM_CELL: A software tool for electron microscopy. Part 2 analysis of crystalline materials

5. Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density

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