Atomistic structure of the Si(100)–SiO2 interface: A synthesis of experimental data
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1604470
Reference26 articles.
1. The end of the road for silicon?
2. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
3. Characterization and production metrology of thin transistor gate oxide films
4. Evidence of annealing effects on a high-density Si/SiO2 interfacial layer
5. Evidence of annealing effects on a high-density Si/SiO2 interfacial layer
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3. First-principles modeling of defect-free abrupt SiC/SiO2 interfaces on a- and m-face 4H-SiC;Applied Physics Express;2018-09-12
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