Emission wavelength dependence of characteristic temperature of InGaN laser diodes-Reference-Cited by-同舟云学术

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Emission wavelength dependence of characteristic temperature of InGaN laser diodes

Published:2013-08-12 Issue:7 Volume:103 Page:071102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bojarska Agata,Goss Jakub,Marona Łucja,Kafar Anna,Stańczyk Szymon,Makarowa Irina,Najda Stephen,Targowski Grzegorz,Suski Tadek,Perlin Piotr

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4818576

Reference12 articles.

1. Nitride Semiconductors and Devices

2. Performance and degradation of continuous-wave InGaN multiple-quantum-well laser diodes on epitaxially laterally overgrown GaN substrates

3. High‐power GaN‐based semiconductor lasers

4. Low Threshold Current Density InGaN Based 520–530 nm Green Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

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3. Room temperature continuous-wave operated 2.0-W GaN-based ultraviolet laser diodes;Optics Letters;2022-03-23

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