Growth and characterization of AlInGaN quaternary alloys-Reference-Cited by-同舟云学术

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Growth and characterization of AlInGaN quaternary alloys

Published:1996-01 Issue:1 Volume:68 Page:40-42
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

McIntosh F. G.,Boutros K. S.,Roberts J. C.,Bedair S. M.,Piner E. L.,El‐Masry N. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.116749

Reference8 articles.

Cited by 98 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced Performance of the Non-Polar Ultraviolet Light-Emitting Diodes with Lattice-Matched Quaternary Quantum Barriers;Key Engineering Materials;2022-01-21

2. A Composition-Dependent Unified Analytical Model for Quaternary InAlGaN/GaN HEMTs for pH Sensing;Journal of Electronic Materials;2021-03-22

3. Enhancement of electron transport properties of InAlGaN/AlN/GaN HEMTs on silicon substrate with GaN insertion layer;Applied Physics Express;2020-04-29

4. Al composition and AlxInyGazN layer thickness dependent new analytical model for I-V characteristics of AlxInyGazN/GaN HEMTs;Materials Today: Proceedings;2019

5. A Theoretical Investigation of the Miscibility and Structural Properties of Inx Aly Ga1−x−y N Alloys;physica status solidi (b);2018-04-24

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