Low thermal expansion polymide buried ridge waveguide AlGaAs/GaAs single‐quantum‐well laser diode
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340042
Reference3 articles.
1. Extremely low threshold (AlGa)As graded‐index waveguide separate‐confinement heterostructure lasers grown by molecular beam epitaxy
2. Very low threshold current ridge-waveguide AlGaAs/GaAs single-quantum-well lasers
3. Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO2
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 0.78- and 0.98-μm ridge-waveguide lasers buried with AlGaAs confinement layer selectively grown by chloride-assisted MOCVD;IEEE Journal of Selected Topics in Quantum Electronics;1995-06
2. Single-quantum-well strained-layer InGaAs-InGaAsP lasers for the wavelength range from 1.43 to 1.55 mu m;IEEE Photonics Technology Letters;1991-04
3. High-speed GaAs/AlGaAs optoelectronic devices for computer applications;IBM Journal of Research and Development;1990-07
4. GaAs double quantum well laser diode with short‐period (AlGaAs)m(GaAs)nsuperlattice barriers;Applied Physics Letters;1989-04-10
5. High-quality AlGaAs/GaAs quantum well with a short period (InGaAs)(GaAs) strained superlattice buffer layer;Journal of Crystal Growth;1989-02
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