Single-quantum-well strained-layer InGaAs-InGaAsP lasers for the wavelength range from 1.43 to 1.55 mu m-Reference-Cited by-同舟云学术

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Single-quantum-well strained-layer InGaAs-InGaAsP lasers for the wavelength range from 1.43 to 1.55 mu m

Published:1991-04 Issue:4 Volume:3 Page:311-313
ISSN:1041-1135
Container-title:IEEE Photonics Technology Letters
language:
Short-container-title:IEEE Photon. Technol. Lett.

Author:

Liou K.-Y.,Dentai A.G.,Burrows E.C.,Joyner C.H.,Burrus C.A.,Raybon G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx3/68/2694/00082096.pdf?arnumber=82096

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spectral Analysis of Quantum-Dash Lasers: Effect of Inhomogeneous Broadening of the Active-Gain Region;IEEE Journal of Quantum Electronics;2012-05

2. High relaxation oscillation frequency operation of a QW-LD at the second quantized level;IEEE Journal of Quantum Electronics;1994

3. High‐power, single‐frequency operation of an InGaAsP/InGaAs active‐grating surface emitting amplifier at λ=1.7 μm;Applied Physics Letters;1993-04-26

4. Low‐threshold and high‐temperature operation of 1.55‐μm self‐aligned ridge‐waveguide multiple‐quantum‐well lasers grown by chemical‐beam epitaxy;Applied Physics Letters;1991-12-23

5. A 5 Gb/s monolithically integrated lightwave transmitter with 1.5 mu m multiple quantum well laser and HBT driver circuit;IEEE Photonics Technology Letters;1991-10

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