High‐power, single‐frequency operation of an InGaAsP/InGaAs active‐grating surface emitting amplifier at λ=1.7 μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109515
Reference18 articles.
1. Length dependence of the saturation characteristics in 1.5- mu m multiple quantum well optical amplifiers
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4. High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers
5. A high gain GRIN-SCH MQW optical semiconductor laser amplifier
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5. Master-Oscillator Power-Amplifier Diode Lasers;Monolithic Diode-Laser Arrays;1994
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