1.3 μm MQW semiconductor optical amplifiers with high gain and output power-Reference-Cited by-同舟云学术

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1.3 μm MQW semiconductor optical amplifiers with high gain and output power

Published:1991 Issue:2 Volume:27 Page:165
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Sherlock G.,Seltzer C.P.,Elton D.J.,Perrin S.D.,Robertson M.J.,Cooper D.M.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19910106?crawler=true&mimetype=application/pdf

Reference12 articles.

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Passively Modelocked Laser With Tunable Pulse Repetition Frequency in a Semiconductor Optical Amplifier;IEEE Journal of Quantum Electronics;2011-06

2. Optical Amplifiers;Trends in Optical Fibre Metrology and Standards;1995

3. Master-Oscillator Power-Amplifier Diode Lasers;Monolithic Diode-Laser Arrays;1994

4. Monolithic InGaAsP-InP laser amplifier gate switch matrix;IEEE Journal of Quantum Electronics;1993-06

5. High‐power, single‐frequency operation of an InGaAsP/InGaAs active‐grating surface emitting amplifier at λ=1.7 μm;Applied Physics Letters;1993-04-26

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