Γ toXzelectron transfer times in type‐II superlattices due to emission of confined phonons
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112095
Reference17 articles.
1. Valley-mixing effects in short-period superlattices
2. Valley-mixing effects in (GaAs)l(AlAs)msuperlattices with microscopically imperfect interfaces
3. Nature of the lowest confined electron state in GaAs/AlAs type II quantum wells as a function of AlAs thickness
4. Zone-folding effect in short-period (GaAs)n/(AlAs)nsuperlattices withnin the range 3–15
5. Γ-X mixing effects on photoluminescence intensity in GaAs/AlAs type-II superlattices
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1. Binding energy and radiative lifetime of an exciton in a type-II quantum well;Physica Scripta;2011-12-08
2. Electron-phonon relaxation rates in InGaAs–InP and HgCdTe–CdTe quantum wells;Journal of Applied Physics;1999-05-15
3. Binding energies of ground and excited donor states bound toXvalleys in GaAs/AlAs type-II quantum wells;Physical Review B;1998-09-15
4. Carrier transport affected byΓ−Xtransfer in type-I GaAs/AlAs superlattices;Physical Review B;1998-09-15
5. Effects of interfacial charges on semiconductor films;Physical Review B;1998-05-15
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