Valley-mixing effects in (GaAs)l(AlAs)msuperlattices with microscopically imperfect interfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.42.11818/fulltext
Reference20 articles.
1. Optical properties of (AlAs)n(GaAs)nsuperlattices grown by metalorganic chemical vapor deposition
2. Energy levels of very short‐period (GaAs)n‐(AlAs)nsuperlattices
3. Electronic properties of semiconductor alloy systems
4. Pressure dependence of GaAs/AlxGa1−xAs quantum-well bound states: The determination of valence-band offsets
5. Effects of alloying and hydrostatic pressure on electronic and optical properties of GaAs-Al_{x}Ga_{1-x}As superlattices and multiple-quantum-well structures
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1. Lateral confinement and band mixing in ultrathin semiconductor quantum wells with steplike interfaces;Physical Review B;2004-10-04
2. Electronic states in GaAs-AlAs short-period superlattices;Handbook of Thin Films;2002
3. AlAs-monolayer dependence of theΓ−Xcoupling in GaAs-AlAs type-II heterostructures;Physical Review B;2000-12-15
4. AlAs monolayer dependence of the radiative recombination rate in a type II GaAs–AlAs double quantum well;Solid State Communications;2000-04
5. Optical studies of ultrashort-period GaAs/AlAs superlattices grown on (In,Ga)As pseudosubstrate;Physical Review B;1998-09-15
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