Binding energies of ground and excited donor states bound toXvalleys in GaAs/AlAs type-II quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.7829/fulltext
Reference29 articles.
1. Optically detected magnetic resonance of group-IV and group-VI impurities in AlAs andAlxGa1−xAs withx≥0.35
2. Binding energies and intra-donor absorption spectra in GaAs-GaAlAs quantum wells
3. Donor 1s-2p±transitions in doped GaAs-Ga1−xAlxAs quantum wells: Effects of electric and magnetic fields
4. Electron-Optical-Phonon Interaction in Semiconductor Multiple-Quantum-Well Structures
5. Quasi-Two-Dimensional Resonant Bound Polarons
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1. Self-polarization of a donor impurity for the first excited state in an Ga1-xAlxAs/GaAs quantum well;Indian Journal of Physics;2020-09-07
2. The energy state of an impurity donor in a type II quantum dot;Physica E: Low-dimensional Systems and Nanostructures;2015-11
3. Electric field effect on the donor levels bound to the X -valleys in AlAs/GaAs quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2015-11
4. 1s-like state binding energy of a donor impurity bound to Xz valleys of GaAs/AlAs type II quantum dots with an uniform applied magnetic field;Journal of Physics: Conference Series;2014-04-01
5. Pressure study on the semiconductor-metal transition in a quantum well;physica status solidi (b);2009-06
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