Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells-Reference-Cited by-同舟云学术

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Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

Published:2014-02-21 Issue:7 Volume:115 Page:073510
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Rosales D.,Gil B.,Bretagnon T.,Guizal B.,Zhang F.,Okur S.,Monavarian M.,Izyumskaya N.,Avrutin V.,Özgür Ü.,Morkoç H.,Leach J. H.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4865959

Reference38 articles.

1. Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates

2. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

3. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

4. GaN Growth Using GaN Buffer Layer

5. Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers

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4. Micro-LED as a Promising Candidate for High-Speed Visible Light Communication;Applied Sciences;2020-10-21

5. Photoluminescence efficiency of Al-rich AlGaN heterostructures in a wide range of photoexcitation densities over temperatures up to 550 K;Physical Review B;2020-07-01

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