Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage-Reference-Cited by-同舟云学术

Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

Published:2016-07-28 Issue:4 Volume:120 Page:045702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kizu Takio¹^ORCID,Aikawa Shinya¹²^ORCID,Nabatame Toshihide³,Fujiwara Akihiko⁴^ORCID,Ito Kazuhiro⁵,Takahashi Makoto⁵,Tsukagoshi Kazuhito¹

Affiliation:

1. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan

2. Research Institute for Science and Technology, Kogakuin University, Hachioji, Tokyo 192-0015, Japan

3. MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan

4. Department of Nanotechnology for Sustainable Energy, School of Science and Technology, Kwansei Gakuin University, 2-1 Gakuen, Sanda, Hyogo 669-1337, Japan

5. Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

Funder

Grant-in-Aid Scientific Research

Open Partnership Joint Project of JSPS-NSFC Bilateral Joint Research under Grant

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4959822

Reference32 articles.

1. Drift-mobility measurements in amorphous semiconductors using traveling-wave method