Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

Author:

Kizu Takio1ORCID,Aikawa Shinya12ORCID,Nabatame Toshihide3,Fujiwara Akihiko4ORCID,Ito Kazuhiro5,Takahashi Makoto5,Tsukagoshi Kazuhito1

Affiliation:

1. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan

2. Research Institute for Science and Technology, Kogakuin University, Hachioji, Tokyo 192-0015, Japan

3. MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan

4. Department of Nanotechnology for Sustainable Energy, School of Science and Technology, Kwansei Gakuin University, 2-1 Gakuen, Sanda, Hyogo 669-1337, Japan

5. Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

Funder

Grant-in-Aid Scientific Research

Open Partnership Joint Project of JSPS-NSFC Bilateral Joint Research under Grant

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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