Polarized Raman backscattering selection rules for (hhl)-oriented diamond- and zincblende-type crystals-Reference-Cited by-同舟云学术

Polarized Raman backscattering selection rules for (hhl)-oriented diamond- and zincblende-type crystals

Published:2016-08-07 Issue:5 Volume:120 Page:055701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Steele J. A.¹²,Puech P.³,Lewis R. A.¹

Affiliation:

1. Institute for Superconducting and Electronic Materials and School of Physics, University of Wollongong, Wollongong, New South Wales 2522, Australia

2. Centre for Surface Chemistry and Catalysis, KU Leuven, Celestijnenlaan 200F, 3001 Leuven, Belgium

3. CEMES-UPR8011, Université Paul Sabatier, 29 rue Jeanne Marvig, 31055 Toulouse, France

Funder

Australian Research Council (ARC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4959824

Reference14 articles.

1. Semipolar single component GaN on planar high index Si(11h) substrates

2. Controlling Planar and Vertical Ordering in Three-Dimensional (In,Ga)As Quantum Dot Lattices by GaAs Surface Orientation

3. InGaAs quantum dots grown on B-type high index GaAs substrates: surface morphologies and optical properties

4. High quality epitaxial GaAs and InP wafers by isoelectronic doping

5. Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates

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