Micro‐Raman study on GaAs layers directly grown on (100) Si by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351551
Reference15 articles.
1. Gallium arsenide and other compound semiconductors on silicon
2. Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD
3. Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) silicon
4. Microstructure of thin layers of MBE-grown GaAs on Si substrates
5. Molecular beam epitaxial growth of a GaAs layer free from antiphase domains on an exactly (100)-oriented Si substrate preheated at 1000°C
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