Investigation of silicon-germanium fins fabricated using germanium condensation on vertical compliant structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2151257
Reference14 articles.
1. Temperature effects on Ge condensation by thermal oxidation of SiGe-on-insulator structures
2. Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique
3. New approach to the growth of low dislocation relaxed SiGe material
4. Relaxed Si1−xGex films with reduced dislocation densities grown by molecular beam epitaxy
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