Temperature effects on Ge condensation by thermal oxidation of SiGe-on-insulator structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1649812
Reference8 articles.
1. Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology
2. Formation of strained-silicon layer on thin relaxed-SiGe/SiO 2 /Si structure using SIMOX technology
3. Formation of SiGe on Insulator Structure and Approach to Obtain Highly Strained Si Layer for MOSFETs
4. A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs
5. Measurements of alloy composition and strain in thin GexSi1−xlayers
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