Annealing behavior of Si implanted InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340186
Reference9 articles.
1. Rapid thermal annealing of Si implanted GaAs for power field‐effect transistors
2. Implanted planar GaInAsP/InP hetero-bipolar transistor
3. Temperature Response of GaAs in a Rapid Thermal Annealing System
4. Epitaxial regrowth of (100) InP layers amorphized by ion implantation at room temperature
5. Incorporation of Si in Liquid Phase Epitaxial InP Layers
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1. (Invited) A Brief Review of Doping Issues in III-V Semiconductors;ECS Transactions;2013-05-03
2. Surface roughness in sulfur ion-implanted InP with molecular beam epitaxy regrown double-heterojunction bipolar transistor layers;Applied Physics Letters;2005-04-04
3. Ion mass and temperature dependence of damage production in ion implanted InP;Journal of Applied Physics;1997-12-15
4. Structural and electrical properties of Si‐ and Se‐implanted InP layers;Journal of Applied Physics;1994-04-15
5. Characterization of furnace-annealed Si-implanted InP:Fe;Semiconductor Science and Technology;1993-08-01
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