Rapid thermal annealing of Si implanted GaAs for power field‐effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96289
Reference10 articles.
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4. Stoichiometric disturbances in ion implanted GaAs and redistribution of Cr during annealing
5. Correlation between structural and electrical profiles in ion-implanted GaAs
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1. Rapid Isothermal Processing (RIP);Handbook of Compound Semiconductors;1995
2. High temperature rapid thermal annealing of InP and related materials;Materials Science and Engineering: B;1993-03
3. Rapid thermal annealing of MIS GaAs schottky barriers;Physica Status Solidi (a);1991-10-16
4. Ability of reflection high energy electron diffraction (RHEED) to observe structural modifications in ion-implanted and annealed GaAs;Journal of Materials Science;1991-06
5. Effects of total liquid encapsulation on the characteristics of GaAs single crystals grown by the vertical gradient freeze technique;Journal of Crystal Growth;1991-03
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