Matrix effect and surface oxidation in depth profiling of AlxGa1−xAs by secondary ion mass spectrometry using O+2primary ions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332342
Reference17 articles.
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5. Plasma‐Grown Oxide on GaAs: Semiquantitative Chemical Depth Profiles Obtained Using Auger Spectroscopy and Neutron Activation Analysis
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Quantitative Secondary Ion Mass Spectrometry (SIMS) of III-V Materials;MRS Proceedings;2001
2. Heavily carbon-doped In[sub 0.53]Ga[sub 0.47]As on InP (001) substrate grown by solid source molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
3. Characterization of Compound Semiconductor Material by Ion Beams;Handbook of Compound Semiconductors;1995
4. Depth Profiling of As in an AlAs/GaAs Multilayer by a New Laser-Induced Sputtered Neutral Mass Spectrometry System;Japanese Journal of Applied Physics;1993-02-15
5. Sputtering processes in AlxGa1−xAs and the effects on post-ionization detection;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-01
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