Sputtering processes in AlxGa1−xAs and the effects on post-ionization detection
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference28 articles.
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1. Sputtering of AlxGa1−x As semiconductor targets by Ar+ ions with energies of 2–14 keV;Technical Physics;1997-06
2. Soft laser sputtering of the GaAlAs (100) surface;Applied Surface Science;1996-04
3. Pulsed laser sputtering of the (100)GaAlAs surface;Journal of Applied Physics;1996
4. Soft laser sputtering of the GaAlAs (100) surface;Laser Ablation;1996
5. Detection of Sputtered Neutrals by Ultrahigh-Intensity Postionization in the Near-Infrared;Analytical Chemistry;1995-11-15
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